Browsing by Author "Sathish, Sugumaran"

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    HYBRID PVA-IN2O3 NANO THIN FILM FOR TRANSPARENT OPTICAL DEVICES
    (International Journal of Advance Engineering and Research Development, 2017-12) Sathish, Sugumaran; Dinesh, Muthu; Chandar, Shekar Bellan; Dinesh, Bheeman; Sharmila, Chandran
    Hybrid PVA-In2O3 transparent nano thin film (293 nm) was prepared by very simple and cost effective dip coating method. The effect of annealing temperature on the functional group, structure, morphology and optical properties was investigated. The presence of metal-oxide (In-O) bond was confirmed from Fourier transform infrared spectroscopy. X-ray diffraction patterns revealed the predominantly amorphous in nature of the films. Scanning electron microscopy images revealed spherical shaped uniform grains distributed over the entire film surface. The sizes of the grains increased with increase of annealing temperature. The percentage of transmittance (80 to 90%) increases whereas band gap energy (3.80 to 3.76 eV) values decreases with increase of annealing temperature. The obtained results indicated that the amorphous nature and high transmittance with wide band gap of the prepared transparent hybrid nano thin films indicated the feasibility of utilizing these nano thin films in transparent optical device applications.
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    NEW POSSIBILITY ON INZNO NANO THIN FILM FOR GREEN EMISSIVE OPTOELECTRONIC DEVICES
    (Elsevier, 2016-04) Sathish, Sugumaran; Mohd, Noor Bin Ahmad; Mohd, Faizal Jamlos; Chandar, Shekar Bellan; Sharmila, Chandran; Manoj, Sivaraj
    Indium zinc oxide (InZnO) nano thin film was prepared from InZnO nanoparticles (NPs) by thermal evaporation technique. Fourier transform infrared spectroscopy showed the presence of metal-oxide bond. X-ray diffraction pattern revealed the mixed phase structure. The presence of elements In, Zn and O were identified from energy dispersive X-ray analysis. Size of the NPs was found to be 171 and 263 nm by transmission electron microscopy. Scanning electron microscopy image showed the spherical shape uniform morphology with uniform distribution grains. Photoluminescence spectrum exhibited a broad green emission for InZnO nano thin film. The acquired results of structure, smooth morphology and photoluminescence property suggested that the InZnO nano thin film to be a promising material for room temperature green emissive optoelectronic, laser diodes, solar cells and other optical devices.
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    NEW POSSIBILITY ON INZNO NANO THIN FILM FOR GREEN EMISSIVE OPTOELECTRONIC DEVICES
    (Elsevier, 2016-04) Sathish, Sugumaran; Mohd Noor, Bin Ahmad; Mohd, Faizal Jamlos; Chandar Shekar, Bellan; Sharmila, Chandran; Manoj, Sivaraj
    Indium zinc oxide (InZnO) nano thin film was prepared from InZnO nanoparticles (NPs) by thermal evaporation technique. Fourier transform infrared spectroscopy showed the presence of metal-oxide bond. X-ray diffraction pattern revealed the mixed phase structure. The presence of elements In, Zn and O were identified from energy dispersive X-ray analysis. Size of the NPs was found to be 171 and 263 nm by transmission electron microscopy. Scanning electron microscopy image showed the spherical shape uniform morphology with uniform distribution grains. Photoluminescence spectrum exhibited a broad green emission for InZnO nano thin film. The acquired results of structure, smooth morphology and photoluminescence property suggested that the InZnO nano thin film to be a promising material for room temperature green emissive optoelectronic, laser diodes, solar cells and other optical devices.